compound semiconductor造句

• Compound semiconductor materials
  化合物半导体材料
• Binary compound semiconductor
  二元化合物半导体
• 5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor
  通过推导，得出一个计算化合物半导体异质结内建电势的公式。
• Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure
  氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3 . 3ev 。
• Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
  氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。
• Zinc oxide is a ii - iv wide band - gap ( eg = 3 . 37ev ) compound semiconductor with wurtzite crystal structure
  六角纤锌矿结构的氧化锌是一种重要的宽带隙-族半导体材料，室温下带隙为3 . 37ev 。
• Plasma etching has been widely used in the etching process of si devices . now the study is focused on the microfabrication of compound semiconductor
  等离子体干法刻蚀在硅器件的微细加工中已经得到广泛应用，目前研究的焦点集中在化合物半导体。
• Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
  概括介绍了近年来- v族化合物半导体材料键合技术的最新研究进展及其在光电子器件和集成领域的应用。
• It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices
  Sic是唯一可以氧化生长成sio _ 2的化合物半导体材料，这使得它可以运用si平面工艺条件进行sic器件的制造，特别制作mos器件方面。
• Led stands for light emitting diode , a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light , using the characteristics of compound semiconductor
  半导体技术已经改变了世界，半导体照明技术将再一次改变我们的世界。随着半导体照明光源在城市景观商业大屏幕交通信号灯手机及
• Zinc oxide as a wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure , is gaining importance for the possible application as a semiconductor laser , due to its ultraviolet emission at room temperature
  宽禁带zno半导体为直接带隙材料，具有六方结构，较高的激子束缚能( 60mev ) ，室温下带隙宽度为3 . 3ev 。
• Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature
  碲锌镉( cd _ ( 1 - x ) zn _ xte ，简写czt )单晶体是一种性能优异的三元化合物半导体室温核辐射探测器材料，具有闪锌矿型的面心立方结构。
• They have been widely used in optical - fiber communication , satellite communication , super high speed computer , high speed measurement instrument , mobile communication , etc . since gaas is compound semiconductor , it is difficult to achieve high quality gaas crystal
  Gaas器件与电路具有速度高、功耗低、噪声小、耐高温、抗辐射等优点，在光纤通信、卫星、超高速计算机、高速测试仪器、移动通信和航空航天等领域中有着重要的应用。
• Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
  Aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、 soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。
• Besides the element semiconductors , such as si ( called the first generation semiconductor ) , and the compound semiconductors , such as gaas , inp ( called the second generation semiconductor ) , silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )
  碳化硅( sic )材料是继第一代元素半导体( si )和第二代化合物半导体( gaas 、 inp 、 gap等)材料之后的第三代宽带隙半导体材料。
• Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance . the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention
  Gaas晶体是一种电学性能优越的-族化合物半导体材料，以其为衬底制作的半导体器件及集成电路，由于具有信息处理速度快等优点而受到青睐，成为近年来研究的热点。
• Led stands for light emitting diode , a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light , using the characteristics of compound semiconductor . this is used for household appliances , remote controller , electric bulletin board , various kinds of automation appliances
  它是利用固体半导体芯片作为发光材料，在半导体中通过载流子发生复合放出过剩的能量而引起光子发射，直接发出红黄蓝绿青橙紫白色的光。
• This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film . by means of single probe and double probe , the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed . the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
  利用单探针和双探针诊断30mm高反应室和50mm高反应室在各种工艺条件下的离子密度和电子温度，得到这两个参数在反应室轴向位置的空间分布、随功率和气压的变化曲线、顶盖接地和反应室体积对它们的影响，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，电子温度在4 10ev之间；当顶盖接地时，该处的等离子体密度明显大于不接地；在同样条件下， 50mm高反应室内的离子密度明显大于30mm高反应室。
• Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
  本文基于gaas等?族化合物半导体的转移电子理论，结合半绝缘gaas光电导开关中特有的lock - on效应的研究，提出了类似于耿畴(高场畴或偶极畴)的单极电荷畴理论模型，对光电导开关lock - on效应的各种现象给出了理论解释。
• Zno film is a novel - direct compound semiconductor with wide band gap energy of 3 . 37ev and a exciton binding energy 60mev at room temperature . due to its the prerequisite for visible or ultraviolet light emission at room temperature , it has the tremendous potential applications for ultraviolet detectors , leds , lds . zno thin film is used widely and effectively in the fields of surface acoustic wave devices , solar cell , gas sensors , varistors and so on because of its excellent piezoelectrical performance
  室温下禁带宽度为3 . 37ev ，激子束缚能为60mev ，具备了室温下发射紫外光的必要条件，在紫外探测器、 led 、 ld等领域有着巨大的发展潜力； zno薄膜以其优良的压电性能、透明导电性能等使其在太阳能电池、压电器件、表面声波器件、气敏元件等诸多领域得到广泛应用。